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NP82N06PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
I D = 41 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
12
10
8
6
4
Pulsed
V GS = 5 V
V GS = 10 V
1000
C iss
C oss
2
V GS = 0 V
C rss
0
100
f = 1 MHz
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
60
12
50
V DD = 48 V
V DD = 30 V
10
100
t d(off)
40
V DD = 12 V
8
t d(on)
30
6
10
V DD = 30 V
V GS = 10 V
t f
t r
20
10
V DS
V GS
4
2
R G = 0 Ω
I D = 82 A
1
0
0
0.1
1
10
100
0
20
40
60
80
100
120
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
V GS = 10 V
100
V GS = 5 V
10
V GS = 0 V
1
0.1
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/ μ s
0.01
Pulsed
10
V GS = 0 V
0
0.5
1
1.5
1
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18227EJ1V0DS
I F - Diode Forward Current - A
5
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